| DESCRIPTION RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. FEATURES •High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz •High Efficiency: 60%typ.on HF Band APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets.
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| Best.Nr.: rd100hhf1 |
Preis: 27,91 € |
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